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| RB095B-40 Diodes Schottky barrier diode (Silicon Epitaxial Planer) RB095B-40 Applications General rectification (Common cathode dual chip) External dimensions (Unit : mm) 6.50.2 5.10.2 0.1 0.05 1.50.3 2.30.2 0.1 0.50.1 Land size figure 6.0 5.50.3 0.1 9.50.5 1.05 1.74 Features 1) Power mold (CPD3) 2) High reliability 3) Low VF & Low IR 1.5 0.75 0.9 1 2 3 0.650.1 0.550.1 0.55 1.20.2 2.5 1.2 0.8 1.5 2.30.2 2.30.2 2.2 2-R0.3 CPD 2.3 2.3 2.0 0.5 1.35 ROHM : CPD JEITA : SC-63 0.15 0.16 2.55 1 2 3 R0.45 Structure 0.95 24.5 0.5 ManufactureDate Taping dimensions (Unit : mm) 2.00.05 4.00.1 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 2.70.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 6 45 150 -40 to +150 Unit V V A A C C Business frequencies, Rating of R-load, 1/2 lo per diode, Tc=120C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR Min. - - - Typ. - - - Max. 0.55 0.1 6.0 Unit V mA IF=3.0A VR=40V junction to case Conditions jc C/W 13.50.2 16.00.2 Rev.A 3.0 2.0 1.6 1.6 6.0 1/3 RB095B-40 Diodes Electrical characteristic curves 10 Ta=150 100000 1000000 Ta=150 Ta=125 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=-25 1 Ta=125 Ta=25 Ta=75 0.1 10000 1000 100 Ta=25 10 1 0.1 Ta=-25 Ta=75 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0.01 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 200 650 Ta=25 VR=40V n=30pcs 640 Ta=25 f=1MHz VR=0V n=10pcs AVE:617.9pF FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 150 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 490 Ta=25 IF=3A n=30pcs 630 620 610 600 590 580 570 560 480 100 470 AVE:472.9mV 460 50 AVE:14.2uA 0 450 VF DISPERSION MAP 550 IR DISPERSION MAP Ct DISPERSION MAP 300 30 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 Ifsm 1cyc 8.3ms 25 20 15 10 AVE:11.40ns 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm 8.3ms 8.3ms 1cyc 100 AVE:76.0A 0 IFSM DISRESION MAP 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 Mounted on epoxy board IM=100mA IF=3A 10 Ifs t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 1ms time FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 300us D=1/2 5 Sin(180) DC 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS t(ms) 100 0 0.1 0.001 0 0.1 TIME:t(s) 10 Rth-t CHARACTERISTICS 1000 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 10 Rev.A 2/3 RB095B-40 Diodes 10 15 15 0A 0V t DC Io AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 REVERSE POWER DISSIPATION:PR (W) 6 Sin(180) D=1/2 10 D=1/2 T VR D=t/T VR=20V Tj=150 0A 0V t DC Io VR D=t/T VR=20V Tj=150 10 D=1/2 5 Sin(180) T 4 DC 2 5 Sin(180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 30 ELECTROSTATIC DDISCHARGE TEST ESD(KV) No break at 30kV 25 20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k AVE:15.6kV Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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